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ENERGY GAP OF SEMICONDUCTOR USING SILICON DIODE

Experiment(s):

1. Determination of Energy gap of a semiconductor sample



Specifications:

a) Semiconductor energy gap kit
Voltmeter: 0-20 V
Resolution: 0.01 V
Ammeter: 0-200 mA
Resolution: 0.1 mA
Source: Built-in constant
current source with variable
output current setting
Rated Input: 220 V/50 Hz
or 110 V/60 Hz
Power consumption: <40 W
Cabinet: Acrylic body,
aluminium bottom
Connectors:
2 mm - 2 mm brass moulded
patch cords

b) Digital thermometer
Range: 300 °C
Resolution: 0.1 °C

c) Electric kettle & stand
Kettle capacity: 0.5 L
Maximum temperature: 100 °C
Stand: Height adjustable and
holds test tube with sample
and temperature probe

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