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FOUR PROBE APPARATUS

Experiment(s):

1. Resistivity variation with temperature for a semiconductor sample 2. Determination of energy gap of a semiconductor sample



Specifications:

a) Resistivity of semiconductor
by four probe kit
Voltmeter: 0-200 mV
Resolution: 0.1 mV
Ammeter: 0-20 mA
Resolution: 0.01 mA
Source: Built-in constant
current source with variable
output current setting
Internally connected voltmeter
and current meters
Rated Input: 220 V/50 Hz
or 110 V/60 Hz
Power Consumption: <200 W
Digital thermostat
Resolution: 0.1 °C
Max temperature: 110 °C
Set temperature: with-in +1 °C

b) Four probe arrangement:
Crystal: Mounted on heating
element (electrically insulated)
Sample: Germanium
Size: 10 mm x 5 mm x 1 mm
Pitch of each probe: 2 mm
Heater: 100 W

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