Experiment(s):
1. Drain curves & transconductance curves, determination of GMO, IDSS, Vp. Variation of drain, source resistance with gate voltage & variation of transconductance with gate voltage
Specifications:
a) JFET characteristics kit
Input: Built-in regulated DC
source 0-5 V (1 no.)
Built-in regulated DC source
0-10 V (1 no.) with fine and
coarse variation knob
Meter: Digital DC voltmeter
Display: Digital DC 3½ digit,
LED
Range: 20 V
Resolution: 0.1 V
Current meter: Digital DC
milliammeter
Display: Digital DC 3½ digit,
LED
Range: 20 mA
Resolution: 0.01 mA
FET: Externally mountable
Rated Input: 220 V/50 Hz
or 110 V/60 Hz
Cord/Socket: 3 pin
Power Consumption: <30 W
Cabinet: Acrylic body,
aluminium bottom
b) Patch cords
Set of standard 2 mm Patch
cords of different lengths with
spare cords
